Simultaneous gate sizing and Vth assignment using Lagrangian Relaxation and delay sensitivities

نویسندگان

  • Guilherme Flach
  • Tiago Reimann
  • Gracieli Posser
  • Marcelo de Oliveira Johann
  • Ricardo Augusto da Luz Reis
چکیده

This paper presents a fast and effective approach to cell-type selection and Vth assignment. In our approach, initially a solution without slew and load violation is generated. Then, the Lagrangian Relaxation considering delay sensitivities is used to reduce leakage power keeping the circuit without violations. If the set of cell-types given by Lagrangian Relaxation produces a circuit with negative slack, a timing recovery method is applied to find near-zero positive slack. The solution without negative slack is introduced to a power reduction step. The sizing produced using our approach could achieve up to 28% in power reduction compared to state of the art works. The leakage power of our solutions is, on average, 9.53% smaller than [1] and 12.45% smaller than [2]. Furthermore, the method is 19x faster than [1] and 1.17x faster than [2].

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optimal Gate Sizing with Multiple Vt Assignment using Generalized Lagrangian Relaxation

Simultaneous gate sizing with multiple Vt assignment for optimal delay and power is a complicated task in modern custom designs. In this work, we make the key contribution of a novel gate-sizing and multi-Vt assignment technique based on generalized Lagrangian Relaxation. Experimental results show that our technique has linear runtime and memory usage, and can optimally tune circuits with over ...

متن کامل

LARTTE: A Posynomial-Based Lagrangian Relaxation Tuning Tool for Fast and Effective Gate-Sizing and Multiple Vt Assignment

In this paper, we propose a novel method for fast and effective gate-sizing and multiple Vt assignment using Lagrangian Relaxation (LR) and posynomial modeling. Our algorithm optimizes a circuit’s delay and power consumption subject to slew rate constraints, and can readily take process variation into account. We first use SPICE to generate accurate delay and power models in posynomial form for...

متن کامل

Simultaneous Delay, Yield, and Total Power Optimization in Deep-submicron Cmos Technology Using Gate-sizing, Threshold Voltage Assignment, Nodal Control, and Technology Mapping

The aggressive scaling of CMOS technology below 90nm brings forth many great new physical challenges that must be addressed in the forefront of the design cycle. In addition to meeting the usual timing and dynamic/switching power budgets, designers must also now carefully consider issues such as leakage current/power, crosstalk noise, electromigration, IR drop, and even manufacturing process va...

متن کامل

Noise-constrained Performance Optimization by Simultaneous Gate and Wire Sizing Based on Lagrangian Relaxation

Noise, as well as area, delay, and power, is one of the most important concerns in the design of deep sub-micron ICs. Currently existing algorithms do not handle simultaneous switching conditions of signals for noise minimization. In this paper, we model not only physical coupling capacitance, but also simultaneous switching behavior for noise optimization. Based on Lagrangian relaxation, we pr...

متن کامل

Power Minimization by Simultaneous Dual - Vth Assignment and Gate -

|Gate-sizing is an eeective technique to optimize CMOS circuits for dynamic power dissipation and performance while dual-V th (threshold voltage) CMOS is ideal for leakage power reduction in low voltage circuits. This paper focuses on simultaneous dual-V th assignment and gate-sizing to minimize the total power dissipation while maintaining high performance. An accurate power dissipation model ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013